Energy Transfer in Solid Argon during Ion Bombardment
نویسنده
چکیده
Solid argon is a model system for studies of radiative and nonradiative processes associated with electronic excitation by MeV light ion bombardment. The electronic excited states, excitons and excimers, have been extensively studied in this material and careful studies have also been made of the ejection (sputtering) of atoms from the surface. The sputtering requires transfer of energy from electronic excitation to kinetic energy of atomic motion. Ultraviolet luminescence spectra show a rich structure including features due to molecules ejected while still in an electronically excited state. The luminescence and sputtering results can be described together in terms of exciton formation, diffusion and decay.
منابع مشابه
Growth of adhesive cubic phase boron nitride films without argon ion bombardment
Previously, in situ bombardment of massive ions (Ar, Kr, etc.) was considered to be necessary for the formation of c-BN films. Because of the accumulated stress, bombardment of massive ions has led to the formation of c-BN films with poor adhesion. Here we show that c-BN films can be grown without involving bombardment of massive ions. This is achieved by using plasma-assisted pulsed-laser depo...
متن کاملStress evolution to steady state in ion bombardment of silicon
Low temperature ion bombardment of initially crystalline, defect-free silicon with 700 eV ion beam energy creates a highly-damaged stressed layer a few nanometers thick on the surface. An apparent steady state in structure is achieved at a fluence of 2 · 10–3 · 10 ions/cm. In this work, the stresses are computed using the interatomic force definition of stress. The stress evolution is studied a...
متن کاملStress evolution in Si during low-energy ion bombardment
Measurements of stress evolution during low-energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady-state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress...
متن کاملStatistical characterization of surface defects created by Ar ion bombardment of crystalline silicon
Ion bombardment of crystalline silicon targets induces pattern formation by the creation of mobile surface species that participate in forming nanometer-scale structures. The formation of these mobile species on a Si 001 surface, caused by sub-keV argon ion bombardment, is investigated through molecular dynamics simulation of Stillinger-Weber Phys. Rev. B 31, 5262 1985 silicon. Specific criteri...
متن کاملEffects of Nitrogen Ion Bombardment on Carbon Nanotubes
Carbon nanotubes (CNT) have shown to posses most remarkable electronic and mechanical properties [1,2]. It is very interesting to study the effects produced on these properties after ion bombardment. Although a few works are related to the theoretical studies of ion irradiation on nanotubes [3,4], little progress has been reported on experimental results [5,6]. In fact, only the effect of Argon...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2006